Abstract：

Organic field-effect transistors (OFETs) have attracted intenseinterest due to their solution-processability, flexibility, and mechanicalstretchability. Dramatic improvements have been made in the performance ofOFETs, but, in reality, OFETs are usually plagued by ambient instability. Thisinstability is strongly associated with extrinsic factors, such as the presenceof moisture and oxygen. Therefore, in this review, recent studies of water- andoxygen-related instabilities in OFETs and their origins are discussed andsummarized, with a particular focus on p-type OFETs. Based on this, we havefocused on the discussion of the strategies for improving the ambient stabilityof OFETs, particularly for those components that are most studied in thiscontext: organic semiconductor (OSC) layers, OSC/gate dielectric interface, andOSC/electrode interface. Finally, a summary of the review, as well as aconclusion with a perspective on the pathways to further enhance the stabilityof OFETs, are given.

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