Presenter:Rui Yang (Professor, University of Michigan – Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University)
Topic: Nanoscale Devices for Better Sensing and Computing
Time: 10: 30 am, September 22nd (Saturday)
Location: Conference Room 308, BLDG 910
Abstract：Continuing scaling transistors following Moore’s law has been challenging, thus new types of technology are needed for today’s applications requiring efficient generation and processing of large amounts of data.In abundant-data applications, the energy and delay in computing largely attributes to the huge memory wall instead of the processors alone.A better integration of memory with logic is required for a more efficient computing system.Emerging memory technology such as resistive random-access memory (RRAM) and low-dimensional material transistors are suitable for such integration.We have explored the integration of MoS2 transistors with metal-oxide RRAMs, toward an efficient computing system.On the other hand, efficient sensing is also critical, and we explore engineered single crystal metallic materials for more efficient plasmonics, and nanoelectromechanical systems (NEMS) for sensing.
Biography：
Prof. Rui Yang is a Tenure-Track Assistant Professor in University of Michigan – Shanghai Jiao Tong University Joint Institute (UM-SJTU JI) in Shanghai Jiao Tong University in Shanghai, China, since August 2018.Before that, he was a postdoctoral scholar at Stanford University, working with Prof. H.-S. Philip Wong and Prof. Jonathan Fan.His research covers the integration of emerging nonvolatile memories with two-dimensional (2D) transistors for efficient computing, as well as metallic material engineering for better plasmonics.He obtained his Ph.D. degree from Case Western Reserve University in 2016, working with Prof. Philip Feng on nanoelectromechanical systems and 2D devices.For more information about him, please check: http://umji.sjtu.edu.cn/faculty/yang-rui/
Contact: Prof. Mario Lanza
Editor: Ming Lu