Academic Talk: Substrate effects on silicene and how to exploit them

Presenter: Prof. Udo Schwingenschlögl

Materials Science & Engineering at King Adbullah University of

Science and Technology (KAUST)

Topic: Substrate effects on silicene and how to exploit them

Time: 01:00 p.m., October 19^th (Thursday)

Location: Conference Room 308, BLDG 910-3F

Abstract

Silicene is the Si analogue of graphene with the same honeycomb structure and linear dispersions of the π and π* bands at the K point of the Brillouin zone. It is predicted to realize a buckled structure, due to sp²-sp³ hybridization, and is compatible with the current Si-based nano-electronics. Silicene yet has not been achieved by mechanical exfoliation but can be deposited on metallic substrates such as Ag(111), Ir(111), and ZrB₂(0001). Regrettably, strong interaction with these substrates destroys the Dirac physics. Layered materials such as MgBr₂(0001), MoX₂, and GaX₂ (X = S, Se, and Te), on the other hand, might preserve the characteristic electronic features. The effects of different substrates on silicene will be compared and evaluated with respect to technological requirements.

Biography

Udo Schwingenschlögl is a Professor of Materials Science & Engineering at King Abdullah University of Science and Technology (KAUST). His research interests in condensed matter physics and first-principles materials modeling focus on two-dimensional materials, interface and defect physics, correlated materials, thermoelectric materials, metal-ion batteries, nanoparticles, and quantum transport.

Contact: Prof. Mario Lanza

Editor: Juan Yang