Adv. Funct. Mater.: MoS2/Si Heterojunction with Vertically Standing Layered Structure for Ultrafast, High-Detectivity, Self-Driven, Visible-Near Infrared Photodetectors

time:2015-03-31Hits:26设置

Title:

MoS2/Si Heterojunction with Vertically Standing Layered Structure for Ultrafast, High-Detectivity, Self-Driven, Visible-Near Infrared Photodetectors

Authors:

Liu Wang, Jiansheng Jie*, Zhibin Shao, Qing Zhang, Xiaohong Zhang*, Yuming Wang, Zheng Sun andShuit-Tong Lee*

Institution:

Institute of Functional Nano and Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nano Science and Technology, Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, P. R. China

Abstract:

As an interesting layered material, molybdenum disulfide (MoS2) has been extensively studied in recent years due to its exciting properties. However, the applications of MoS2 in optoelectronic devices are impeded by the lack of high-quality p–n junction, low light absorption for mono-/multilayers, and the difficulty for large-scale monolayer growth. Here, it is demonstrated that MoS2 films with vertically standing layered structure can be deposited on silicon substrate with a scalable sputtering method, forming the heterojunction-type photodetectors. Molecular layers of the MoS2 films are perpendicular to the substrate, offering high-speed paths for the separation and transportation of photo-generated carriers. Owing to the strong light absorption of the relatively thick MoS2 film and the unique vertically standing layered structure, MoS2/Si heterojunction photodetectors with unprecedented performance are actualized. The self-driven MoS2/Si heterojunction photodetector is sensitive to a broadband wavelength from visible light to near-infrared light, showing an extremely high detectivity up to ≈1013 Jones (Jones = cm Hz1/2 W−1), and an ultrafast response speed of ≈3 μs. The performance is significantly better than the photodetectors based on mono-/multilayer MoS2 nanosheets. Additionally, the MoS2/Si photodetectors exhibit excellent stability in air for a month. This work unveils the great potential of MoS2/Si heterojunction for optoelectronic applications.

IF:

10.439

Link:

http://onlinelibrary.wiley.com/doi/10.1002/adfm.201500216/abstract



Editor: Danting Xiang




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