Presenter: G. Benstetter (Professor, Deggendorf Institute of Technology)
Topic: Advances in Electrical and Thermal Characterization of Nanostructured Materials and Thin Films
Time: 9:00 -10:00 am, July. 3rd
Location: 909-B
Abstract
The presentation discusses characterization methods such as scanning probe microscopy (SPM), electron microscopy-based techniques and the 3ω method to study the impact of material structure and film thickness on the transport properties. Case studies are presented for different thin film materials and systems ranging from sputter deposited semiconductors to laser-sintered nanoparticle thin film. The 3ω method is used to determine the thermal conductivity of thin films. Conductive atomic force microscopy (CAFM) is applied to analyze correlations between film morphology and 2D current distribution, supported by electron backscatter diffraction (EBSD) and scanning transmission electron microscopy (STEM). Local IV characteristics are obtained to reveal electrical conduction mechanisms with high spatial resolution.
Biography
Günther Benstetter received the doctorate degree in electrical engineering from Technical University of Munich, Germany, in 1994. He joined Siemens AG in Munich and the IBM/Siemens/Toshiba DRAM development project in Essex Junction, VT, USA, in 1995. Dr. Benstetter was appointed Professor at the Deggendorf Institute of Technology in Deggendorf, Germany, in 1998 and is head of the Institute of Quality and Materials Analysis. His research interests are in the fields of thin films, electronic materials and reliability and failure analysis of semiconductor devices. He has contributed to more than 70 publications. Dr. Benstetter is member of the editorial board of international journals and has co-organized several international conferences.
Contact: Mario Lanza