Adv. Energy Mater.: Ferroelectric Layer‐Assisted Asymmetric Heterojunction Boosts Power Output in Silicon Hydrovoltaic Device

time:2024-04-09Hits:10设置

Title:

Ferroelectric LayerAssisted Asymmetric Heterojunction Boosts Power Output in Silicon Hydrovoltaic Device

Authors:

Yuhang Song1,2, Zheheng Song1,2, Conghui Jiang1,2, Chunfang Xing1,2, Xuelian Zeng1,2, Zekun Zhang1,2, Zhewei Chen1,2, Tao Song1,2, Beibei Shao1,2*, Yusheng Wang1,2,3*, Baoquan Sun1,2,3*

Institutions:

1Soochow Institute of Energy and Material Innovations, Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Institute of Functional Nano & Soft Materials (FUNSOM) and College of Energy, Soochow University, Suzhou 215006, P. R. China.

2Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou 215123, P. R. China.

3Macau Institute of Materials Science and Engineering MUST-SUDA Joint Research Center for Advanced Functional Materials Macau University of Science and Technology Macau 999078, P. R. China.

Abstract:

Hydrovoltaic devices (HDs) that convert ubiquitous environmental energy via water evaporation serves as a prospective technology for renewable power schemes. However, it remains a grand challenge to perform controllable and stable modulation of hydrovoltaic power generation for multi-scenario practical applications. Here, a ferroelectric-field assisted silicon HD is proposed, which sandwiches an ultrathin polarizable polymer between nanostructured silicon and the top electrode, constituting an asymmetric heterojunction designed to clinch well-regulated and robust electrical signal output. Tunable modulation of the internal electric field at the silicon/top electrode interface can be realized by facilely aligning the polarization orientation of the ferroelectric domains, thus dominating the silicon energy band bending and controlling the ultimate electrical signal. Upon effective forward polarization, the interfacial dipoles can build a stronger asymmetric electric field, which allows an efficient sweep of the charges out of the heterojunction. Accordingly, the resulting device clinches to yield a considerably modulated voltage of 1.04 V, nearly three-fold modulation over the reverse polarization one. As prospective applications, multifunctional sensing platforms including the self-sufficient environmental temperature detector, intelligent water-level alarm system, and automatic-manual dual-mode irrigation control system are demonstrated. This work exhibits the unique characteristics of ferroelectric HDs with tunable electrical performance.

IF:

29.698

Link:

https://onlinelibrary.wiley.com/doi/10.1002/aenm.202302765


Editor: Guo Jia


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