Angew. Chem. Int. Ed.: Electronically Manipulated Molecular Strategy Enabling Highly Efficient Tin Perovskite Photovoltaics

Title：

Electronically Manipulated Molecular Strategy Enabling Highly Efficient Tin Perovskite Photovoltaics

Authors：

Tian-Yu Teng^1#, Zhen-Huang Su^2#, Fan Hu¹, Chun-Hao Chen¹, Jing Chen¹, Kai-Li Wang¹, Di Xue¹, Xing-Yu Gao², and Zhao-Kui Wang¹

Institutions：

¹Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123 (China).

²Shanghai Synchrotron Radiation Facility (SSRF), Shanghai Advanced Research Institute, Chinese Academy of Sciences, 239 Zhangheng Road, Shanghai 201204 (China).

Abstract：

Buried interface modification can effectively improve the compatibility between interfaces. Given the distinct interface selections in perovskite solar cells (PSCs), the applicability of a singular modification material remains limited. Consequently, in response to this challenge, we devised a tailored molecular strategy based on the electronic effect of specific functional groups. Therefore, we prepared three distinct silane coupling agents, and due to the varying inductive effects of these functional groups, the electronic distribution and molecular dipole moments of the coupling agents are correspondingly altered. Among them, trimethoxy (3,3,3-trifluoropropyl)-silane (F₃-TMOS), which possesses electron-withdrawing groups, generates a molecular dipole moment directed toward the hole transport layer (HTL). This approach changes the work function of the HTL, optimizes the energy level alignment, reduces open-circuit voltage loss, and facilitates carrier transport. Furthermore, through the buffering effect of the coupling agent, the interface strain and lattice distortion caused by annealing of the perovskite are reduced, enhancing the stability of tin-based perovskite. Encouragingly, tin PSCs treated with F₃-TMOS achieved a champion efficiency of 14.67%. This strategy provides an expedient avenue for the design of buried interface modification materials, enabling precise molecular adjustments in accordance with distinct interfacial contexts to ameliorate mismatched energetics and enhance carrier dynamics.

IF：

16.823

Link：

https://onlinelibrary.wiley.com/doi/epdf/10.1002/anie.202318133