Energy & Environ. Sci.: High Efficiency Hybrid PEDOT:PSS/Nanostructured Silicon Schottky Junction Solar Cells by Doping-Free Rear Contact

Title：

High Efficiency Hybrid PEDOT:PSS/Nanostructured Silicon Schottky Junction Solar Cells by Doping-Free Rear Contact

Authors：

Yunfang Zhang,^a,b Wei Cui, ^a Yawen Zhu, ^a Fengshuo Zu, ^a Liangshen Liao, ^a Shuit-Tong Lee, ^a Baoquan Sun* ^a

Institutions：

^a Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, 199 Ren’ai Road, Suzhou, Jiangsu 215123, PR China

^b Department of Mathematics and Physics, Jiangsu University of Science and Technology, Zhenjiang, 212003, People’s Republic of China

Abstract：

A high doping technique has been widely used for record-efficiency crystalline silicon (Si) solar cells to minimize the series resistance losses and to form a back surface field. However, it requires high temperatures (up to 1000^oC) and involves toxic gases, which may not be compatible for hybrid organic-silicon solar cells. Here, we report that a high power conversion efficiency (PCE) of 13.7% with a device area of 0.8 cm² has been achieved for organic-nanostructured Si hybrid solar cells by inserting a cesium carbonate (Cs₂CO₃) layer between Si and rear electrode aluminium (Al), which is realized by a solution process under low-temperature annealing (<150℃). Transient and constant current-voltage, capacitance-voltage, and scanning Kelvin probe microscope measurements are used to characterize the effect of the Cs₂CO₃ layer on the device performance. The insertion of Cs₂CO₃ not only decreases the contact resistance, but also generated a built-in electric field on the rear electrode. The recombination rates are suppressed at the back surface due to the deflection of minority carriers. These findings show a promising strategy to achieve high performance organic-silicon solar cells with a simple, low temperature and cost effective process.

IF：

15.49

Link：

http://pubs.rsc.org/en/content/articlelanding/2015/ee/c4ee02282c

Editor: Danting Xiang