报告人：李震宇教授（中国科学技术大学）
报告题目：Graphene Growth on Metal Surfaces: from Mechanism Understanding to Protocol Design
时间：2015年12月28日（星期一）下午1:30
地点：909楼B报告厅
摘要
Graphene is an important material with unique properties and many potential applications. A promising way to produce wafer-size graphene is chemical vapor deposition (CVD) on metal surfaces. To improve the sample quality, it is important to understand the atomic details during graphene CVD growth. In this talk, we focus on theoretical studies of growth mechanisms. On Ir(111) surface, a universal lattice mismatch induced nonlinear growth mechanism is revealed by first principles calculations and kMC simulations. On Cu(111) surface, a significant carbon adsorption/diffusion induced surface relaxation characterized by the formation of bridging-metal (BM) structures is predicted. Dimer is found to be the growth feeding species, which leads to the experimentally observed diffusion-limited growth behavior. Carbon atom is found to be able to penetrate a graphene overlayer on Cu surface via an atom exchange mechanism. Using such a process, a protocol to grow high-quality bilayer graphene is proposed.
个人简介
李震宇，男，中国科学技术大学教授、合肥微尺度物质科学国家实验室研究员、博士生导师。1999和2004年分别获得中国科学技术大学物理学学士和物理化学博士学位。2004-2007年先后在美国马里兰大学和加州大学欧文分校从事博士后研究，后回到中国科学技术大学任教。2006年入选全国百篇优秀博士学位论文作者，2008年入选教育部新世纪优秀人才支持计划，2011年获中国科学院卢嘉锡青年人才奖，2012年获得国家自然科学基金委首届优秀青年科学基金项目资助。研究领域为理论与计算化学，主要通过电子结构计算与分子模拟来研究材料物性和生长反应机理。在包括Phys. Rev. Lett.、JACS、Angew. Chem. Int. Ed.在内的国际学术期刊上发表论文100余篇，SCI引用2800余次，H因子为26。