题目： | Solution-Processed Graphene Quantum Dot Deep-UV Photodetectors |
作者： | Qing Zhang†, Jiansheng Jie*†, Senlin Diao†, Zhibin Shao†, Qiao Zhang†, Liu Wang†, Wei Deng†, Weida Hu‡, Hui Xia‡, Xiaodong Yuan†, and Shuit-Tong Lee*† |
单位： | †Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China ‡National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, P. R. China |
摘要： | Fast-response and high-sensitivity deep-ultraviolet (DUV) photodetectors with detection wavelength shorter than 320 nm are in high demand due to their potential applications in diverse fields. However, the fabrication processes of DUV detectors based on traditional semiconductor thin films are complicated and costly. Here we report a high-performance DUV photodetector based on graphene quantum dots (GQDs) fabricated via a facile solution process. The devices are capable of detecting DUV light with wavelength as short as 254 nm. With the aid of an asymmetric electrode structure, the device performance could be significantly improved. An on/off ratio of ∼6000 under 254 nm illumination at a relatively weak light intensity of 42 μW cm–2 is achieved. The devices also exhibit excellent stability and reproducibility with a fast response speed. Given the solution-processing capability of the devices and extraordinary properties of GQDs, the use of GQDs will open up unique opportunities for future high-performance, low-cost DUV photodetectors. |
影响因子： | 12.033 |
分区情况： | 1区 |
链接： | http://pubs.acs.org/doi/abs/10.1021/acsnano.5b00437 责任编辑：向丹婷 |