题目： | Room-temperature high-speed electrical modulation of excitonic distribution in a monolayer semiconductor |
作者： | Guangpeng Zhu1, Lan Zhang1, Wenfei Li1, Xiuqi Shi1, Zhen Zou1, Qianqian Guo1, Xiang Li1, Weigao Xu2, Jiansheng Jie1, Tao Wang1*, Wei Du1*, Qihua Xiong3,4,5,6 |
单位： | 1Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou 215123, P. R. China 2Key Laboratory of Mesoscopic Chemistry, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, P. R. China 3State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, P. R. China 4Frontier Science Center for Quantum Information, Beijing 100084, P. R. China 5Beijing Academy of Quantum Information Sciences, Beijing 100193, P. R. China 6Collaborative Innovation Center of Quantum Matter, Beijing, P. R. China |
摘要： | Excitons in monolayer semiconductors, benefitting from their large binding energies, hold great potential towards excitonic circuits bridging nano-electronics and photonics. However, achieving room-temperature ultrafast on-chip electrical modulation of excitonic distribution and flow in monolayer semiconductors is nontrivial. Here, utilizing lateral bias, we report high-speed electrical modulation of the excitonic distribution in a monolayer semiconductor junction at room temperature. The alternating charge trapping/detrapping at the two monolayer/electrode interfaces induces a non-uniform carrier distribution, leading to controlled in-plane spatial variations of excitonic populations, and mimicking a bias-driven excitonic flow. This modulation increases with the bias amplitude and eventually saturates, relating to the energetic distribution of trap density of states. The switching time of the modulation is down to 5ns, enabling high-speed excitonic devices. Our findings reveal the trap-assisted exciton engineering in monolayer semiconductors and offer great opportunities for future two-dimensional excitonic devices and circuits. |
影响因子： | 17.694 |
分区情况： | 一区 |
链接： |
责任编辑：郭佳