题目： | Efficient Near-Infrared Electroluminescence from Lanthanide-Doped Perovskite Quantum Cutters |
作者： | Yan-Jun Yu1#, Chen Zou1,2,3*#, Wan-Shan Shen1#, Xiaopeng Zheng2, Qi-Sheng Tian1, You-Jun Yu1, Chun-Hao Chen1, Baodan Zhao3, Zhao-Kui Wang1, Dawei Di3*, Osman M. Bakr2*, and Liang-Sheng Liao1,4* |
单位： | 1Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, China. 2Divison of Physical Sciences and Engineering, King Abdullah University of Science and technology, Thuwal 23955-6900, Saudi Arabia. 3State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering; International Research Center for Advanced Photonics, Zhejiang University, Hangzhou, China. 4Macao Institute of Materials Science and Engineering, Macau University of Science and Technology, Macau SAR, Taipa 999078, China. |
摘要： | Perovskite nanocrystals (PeNCs) deliver size and composition-tunable luminescence of high efficiency and color purity in the visible. However, attaining efficient electroluminescence (EL) in the near-infrared (NIR) region from PeNCs is challenging, limiting their potential applications. Here we demonstrate a highly efficient NIR light emitting diode (LED) by doping ytterbium ions into the PeNCs host (Yb3+: PeNCs), extending the EL wavelengths toward 1000 nm, which is achieved through a direct sensitization of Yb3+ ions by the PeNC host. Efficient quantum cutting processes enable high photoluminescence quantum yields (PLQYs) of up to 126% from the Yb3+:PeNCs. Through halide-composition engineering and surface passivation strategy to improve both PLQY and charge transport balance, we demonstrate an efficient NIR LED with a peak EQE of 7.7% at a central wavelength of 990 nm, representing the most efficient perovskite- based LEDs with emission wavelengths beyond 850 nm. |
影响因子： | 16.823 |
分区情况： | 一区 |
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责任编辑：郭佳